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A new IDDQ testing scheme employing charge storage BICS circuit for deep submicron CMOS ULSI

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In this work, a new IDDQ methodology, which is very suitable for testing deep submicron digital ULSI CMOS ICs, is proposed and demonstrated. It incorporates three new BICSs and has advantages of reduction in the circuit partitioning number, low input voltage, high resolution, low power supply voltage, and improved fault detectability and diagnosability.

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