MOS characteristics of N2O-grown and NO-annealed oxynitrides

Title:	MOS characteristics of N2O-grown and NO-annealed oxynitrides
Authors:	Sun, SC Chen, CH Lou, JC 奈米中心 Nano Facility Center
Issue Date:	1995
URI:	http://hdl.handle.net/11536/19999
ISBN:	7-5053-3285-6
Journal:	PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
Begin Page:	A90
End Page:	A92
Appears in Collections:	Conferences Paper