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dc.contributor.authorSeidel, Janen_US
dc.contributor.authorSingh-Bhalla, Guneetaen_US
dc.contributor.authorHe, Qingen_US
dc.contributor.authorYang, Seung-Yeulen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.date.accessioned2014-12-08T15:28:45Z-
dc.date.available2014-12-08T15:28:45Z-
dc.date.issued2013en_US
dc.identifier.issn0141-1594en_US
dc.identifier.urihttp://hdl.handle.net/11536/20808-
dc.identifier.urihttp://dx.doi.org/10.1080/01411594.2012.695371en_US
dc.description.abstractIn this article we provide an overview of phenomena involving domain walls in BiFeO3 as nanoscale functional elements. Because ferroelectric domain walls can be routinely modified using electric fields, our results suggest a new degree of flexibility for domain boundary engineering and oxide-based nanoelectronics.en_US
dc.language.isoen_USen_US
dc.subjectferroelectricsen_US
dc.subjectdomain wallsen_US
dc.subjectscanning probe methodsen_US
dc.subjectopticsen_US
dc.subjectphotovoltaicsen_US
dc.subjectnanoscale characterizationen_US
dc.titleDomain wall functionality in BiFeO3en_US
dc.typeArticleen_US
dc.identifier.doi10.1080/01411594.2012.695371en_US
dc.identifier.journalPHASE TRANSITIONSen_US
dc.citation.volume86en_US
dc.citation.issue1en_US
dc.citation.spage53en_US
dc.citation.epage66en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000312586700006-
dc.citation.woscount12-
Appears in Collections:Articles


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