Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Che-Wei | en_US |
dc.contributor.author | Chung, Cheng-Ting | en_US |
dc.contributor.author | Tzeng, Ju-Yuan | en_US |
dc.contributor.author | Li, Pin-Hui | en_US |
dc.contributor.author | Chang, Pang-Sheng | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.contributor.author | Luo, Guang-Li | en_US |
dc.date.accessioned | 2014-12-08T15:30:22Z | - |
dc.date.available | 2014-12-08T15:30:22Z | - |
dc.date.issued | 2013-04-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2013.2247766 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/21718 | - |
dc.description.abstract | We demonstrate the characteristics of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction diodes formed by heteroepitaxial Ge grown on Si leading to high performance and very low leakage current. The ON/OFF current ratio of the p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction was >10(7) and >10(6), respectively. The OFF current density was extremely low at <10 mu A/cm(2) for the p(+)-Ge/n-Si formed with different implantation energies of 10 similar to 40 KeV and similar to 20 mu A/cm(2) for the n(+)-Ge/p-Si with different implantation energies of 20 similar to 50 KeV at a reverse bias of vertical bar V-R vertical bar = +/- 1 V, respectively. Both p and n-Ge channel multifin field-effect transistors (FinFETs) were formed by a mesa structure using these p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunctions. A high-kappa/metal gate stack was employed. The body-tied Ge multifin FinFET with a fin width (W-Fin) of similar to 40 nm, and the channel length (L-Channel) was 150 nm for p-FinFET and of 110 nm for n-FinFET, exhibiting a driving current of 174 mu A/mu m at V-G = -2 V and 102 mu A/mu m at V-G = 2 V, respectively. This is the first experimental demonstration of a body-tied high mobility Ge channel multifin FinFET using a top-down approach. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Body-tied | en_US |
dc.subject | germanium | en_US |
dc.subject | multifin field-effect transistors (FinFETs) | en_US |
dc.subject | silicon p(+)-Ge/n-Si heterojunction | en_US |
dc.subject | n(+)-Ge/p-Si heterojunction | en_US |
dc.title | Germanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2013.2247766 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 60 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 1334 | en_US |
dc.citation.epage | 1341 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000316821800007 | - |
dc.citation.woscount | 6 | - |
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