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dc.contributor.authorChen, Che-Weien_US
dc.contributor.authorChung, Cheng-Tingen_US
dc.contributor.authorTzeng, Ju-Yuanen_US
dc.contributor.authorLi, Pin-Huien_US
dc.contributor.authorChang, Pang-Shengen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorLuo, Guang-Lien_US
dc.date.accessioned2014-12-08T15:30:22Z-
dc.date.available2014-12-08T15:30:22Z-
dc.date.issued2013-04-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2013.2247766en_US
dc.identifier.urihttp://hdl.handle.net/11536/21718-
dc.description.abstractWe demonstrate the characteristics of p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction diodes formed by heteroepitaxial Ge grown on Si leading to high performance and very low leakage current. The ON/OFF current ratio of the p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunction was >10(7) and >10(6), respectively. The OFF current density was extremely low at <10 mu A/cm(2) for the p(+)-Ge/n-Si formed with different implantation energies of 10 similar to 40 KeV and similar to 20 mu A/cm(2) for the n(+)-Ge/p-Si with different implantation energies of 20 similar to 50 KeV at a reverse bias of vertical bar V-R vertical bar = +/- 1 V, respectively. Both p and n-Ge channel multifin field-effect transistors (FinFETs) were formed by a mesa structure using these p(+)-Ge/n-Si and n(+)-Ge/p-Si heterojunctions. A high-kappa/metal gate stack was employed. The body-tied Ge multifin FinFET with a fin width (W-Fin) of similar to 40 nm, and the channel length (L-Channel) was 150 nm for p-FinFET and of 110 nm for n-FinFET, exhibiting a driving current of 174 mu A/mu m at V-G = -2 V and 102 mu A/mu m at V-G = 2 V, respectively. This is the first experimental demonstration of a body-tied high mobility Ge channel multifin FinFET using a top-down approach.en_US
dc.language.isoen_USen_US
dc.subjectBody-tieden_US
dc.subjectgermaniumen_US
dc.subjectmultifin field-effect transistors (FinFETs)en_US
dc.subjectsilicon p(+)-Ge/n-Si heterojunctionen_US
dc.subjectn(+)-Ge/p-Si heterojunctionen_US
dc.titleGermanium N and P Multifin Field-Effect Transistors With High-Performance Germanium (Ge) p(+)/n and n(+)/p Heterojunctions Formed on Si Substrateen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2013.2247766en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume60en_US
dc.citation.issue4en_US
dc.citation.spage1334en_US
dc.citation.epage1341en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000316821800007-
dc.citation.woscount6-
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