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dc.contributor.authorPan, Tung-Mingen_US
dc.contributor.authorYen, Li-Chenen_US
dc.contributor.authorMondal, Somnathen_US
dc.contributor.authorLo, Chieh-Tingen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:32:09Z-
dc.date.available2014-12-08T15:32:09Z-
dc.date.issued2013en_US
dc.identifier.issn2162-8742en_US
dc.identifier.urihttp://hdl.handle.net/11536/22628-
dc.identifier.urihttp://dx.doi.org/10.1149/2.002310sslen_US
dc.description.abstractIn this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleAl-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/2.002310sslen_US
dc.identifier.journalECS SOLID STATE LETTERSen_US
dc.citation.volume2en_US
dc.citation.issue10en_US
dc.citation.spageP83en_US
dc.citation.epageP85en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000322995700002-
dc.citation.woscount1-
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