Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer

doi:10.1149/2.002310ssl

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DC Field	Value	Language
dc.contributor.author	Pan, Tung-Ming	en_US
dc.contributor.author	Yen, Li-Chen	en_US
dc.contributor.author	Mondal, Somnath	en_US
dc.contributor.author	Lo, Chieh-Ting	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.date.accessioned	2014-12-08T15:32:09Z	-
dc.date.available	2014-12-08T15:32:09Z	-
dc.date.issued	2013	en_US
dc.identifier.issn	2162-8742	en_US
dc.identifier.uri	http://hdl.handle.net/11536/22628	-
dc.identifier.uri	http://dx.doi.org/10.1149/2.002310ssl	en_US
dc.description.abstract	In this letter, we investigate the structural properties and electrical characteristics of the Al-SiO2-Y2O3-SiO2-poly-Si (AOYOP) thin-film transistor (TFT) nonvolatile memory device. The composition of Y2O3 charge-trapping layer was analyzed using X-ray photoelectron spectroscopy. The Y2O3 AOYOP TFT memory device exhibited a large memory window of 2.5 V, a long charge retention time of ten years with a minimal charge loss of similar to 15%, and a better endurance performance for P/E cycles up to 10(5). (c) 2013 The Electrochemical Society. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Al-SiO2-Y2O3-SiO2-poly-Si Thin-Film Transistor Nonvolatile Memory Incorporating a Y2O3 Charge Trapping Layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/2.002310ssl	en_US
dc.identifier.journal	ECS SOLID STATE LETTERS	en_US
dc.citation.volume	2	en_US
dc.citation.issue	10	en_US
dc.citation.spage	P83	en_US
dc.citation.epage	P85	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000322995700002	-
dc.citation.woscount	1	-
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