標題: | The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate |
作者: | Chen, Yu-Chung Lin, Bo-Wen Hsu, Wen-Ching Wu, YewChung Sermon 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2014 |
摘要: | In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B-1, B-2, D-1, D-2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {13 (4) over bar7}, {10 (1) over bar4} and {12 (3) over bar5}, respectively. On the other hand, the surfaces of B-1, B-2, D-1 and D-2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets. (C) 2013 The Electrochemical Society. All rights reserved. |
URI: | http://hdl.handle.net/11536/23849 http://dx.doi.org/10.1149/2.004402jss |
ISSN: | 2162-8769 |
DOI: | 10.1149/2.004402jss |
期刊: | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY |
Volume: | 3 |
Issue: | 2 |
起始頁: | R5 |
結束頁: | R8 |
顯示於類別: | 期刊論文 |