完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Yu-Chung | en_US |
dc.contributor.author | Lin, Bo-Wen | en_US |
dc.contributor.author | Hsu, Wen-Ching | en_US |
dc.contributor.author | Wu, YewChung Sermon | en_US |
dc.date.accessioned | 2014-12-08T15:35:08Z | - |
dc.date.available | 2014-12-08T15:35:08Z | - |
dc.date.issued | 2014 | en_US |
dc.identifier.issn | 2162-8769 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/23849 | - |
dc.identifier.uri | http://dx.doi.org/10.1149/2.004402jss | en_US |
dc.description.abstract | In this study, rectangle-shaped SiO2 hard masks with various orientations were employed to find various facets on wet-etched patterned sapphire substrate (PSS). Seven facets (A, B, B-1, B-2, D-1, D-2 and E) were observed after etching. The surfaces of A, B and E-facets were smooth. Their plane indexes were {13 (4) over bar7}, {10 (1) over bar4} and {12 (3) over bar5}, respectively. On the other hand, the surfaces of B-1, B-2, D-1 and D-2-facets were not smooth, with some ambiguous stripes, which were investigated by using "zigzag triangle" hard mask. A large triangle-mask was employed to investigate smooth facets and the GaN epitaxial behavior. It was found that most of the growth of zincblende GaN was initiated not from A and B-facets but E-facets. (C) 2013 The Electrochemical Society. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The Formation of Smooth Facets on Wet-Etched Patterned Sapphire Substrate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/2.004402jss | en_US |
dc.identifier.journal | ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | en_US |
dc.citation.volume | 3 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | R5 | en_US |
dc.citation.epage | R8 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000331485600015 | - |
dc.citation.woscount | 0 | - |
顯示於類別: | 期刊論文 |