An 80 nm In(0.7)Ga(0.3)As MHEMT with Flip-Chip Packaging for W-Band Low Noise Applications

Abstract

The fabrication process of an 80 nm In(0.7)Ga(0.3)As MHEMT device with flip-chip packaging on Al(2)O(3) substrate is presented. The flip-chip packaged device exhibited good dc characteristics with high I(DS) = 425 mA/mm and high g(m) = 970 mS/mm at V(DS) = 1.5 V. Besides, the RF performances revealed high gain of 10 dB at 50 GHz and low minimum noise figure (NF(min))below 2 dB at 60 GHz, showing the feasibility of flip-chip packaged In(0.7)Ga(0.3)As MHEMT device for low noise applications at W-band.