標題: Terahertz Emission of Magnesium doped Indium Nitride
作者: Yeh, Y. -J.
Ahn, H.
Hong, Y. -L.
Gwo, Shangjr
光電工程學系
Department of Photonics
公開日期: 2010
摘要: Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg. (C)2010 Optical Society of America
URI: http://hdl.handle.net/11536/25720
ISBN: 978-1-55752-890-2
期刊: 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS)
顯示於類別:會議論文