標題: | Terahertz Emission of Magnesium doped Indium Nitride |
作者: | Yeh, Y. -J. Ahn, H. Hong, Y. -L. Gwo, Shangjr 光電工程學系 Department of Photonics |
公開日期: | 2010 |
摘要: | Significant THz power enhancement and polarity reversal were observed from Mg-doped InN. The carrier concentration-dependent THz polarity reversal reflects the interplay between the surface-electric-field and the photo-Dember field for THz emission from InN:Mg. (C)2010 Optical Society of America |
URI: | http://hdl.handle.net/11536/25720 |
ISBN: | 978-1-55752-890-2 |
期刊: | 2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) |
顯示於類別: | 會議論文 |