Ultrafast carrier-carrier scattering in AlxGa1-xAs/GaAs quantum wells

Abstract

We present new time-resolved measurements that demonstrate the effect of injected carrier densities on carrier-carrier scattering rates of a highly nonequilibrium carrier distribution in the p-doped Al0.32Ga0.68As/GaAs quantum wells. The initially photoexcited nonthermal carrier distribution is quickly broadened due to rapid increase of the inelastic carrier-carrier scattering as the injected carrier densities increased toward 10(11) cm(-2). (C) 1999 Elsevier Science B.V. All rights reserved.