標題: BARITT結構的靜態與微波特性
作者: 褚冀良
Chu, Ji-Liang
施敏
Shi, Min
電子研究所
關鍵字: 靜態;微波特性;電子工程;BARITT;BARRIER-INJECTION-ANDTRANSIT-T;PN-JUNCTION-TYPE-STRUCTURE;STATIC-CURRENT-VOLTAGE;CURRENT-TRANSPORT-MECHANISM;ELECTRONIC-ENGINEERING
公開日期: 1972
摘要: BARITT stands for Barrier Injection and Transit Time. The BARITT diode is a new class of microwave solid state devices. In this thesis the static and microwave performances of various BARITT structures have been studied theoretically and experimentally. The BARITT diode family includes two types, the Schottky-type structures and the pn junction-type structrues. For the Schottky-type static current-voltage characteristics and small-signal impedance in order to optimize for higher operation efficiency and power output. The four diode structures are mνnp, Mup. MνnνM and MnνM, where M stands for metal and ν for low-doping n type semiconductor. for the pn junction-type BARITT diodes, the current transport mechanisms and the small-signal impedance of reach-through p+np+ and its related structures have also been studied.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT614430001
http://hdl.handle.net/11536/51030
Appears in Collections:Thesis