BARITT結構的靜態與微波特性

Abstract

BARITT stands for Barrier Injection and Transit Time. The BARITT diode is a new class of microwave solid state devices. In this thesis the static and microwave performances of various BARITT structures have been studied theoretically and experimentally. The BARITT diode family includes two types, the Schottky-type structures and the pn junction-type structrues. For the Schottky-type static current-voltage characteristics and small-signal impedance in order to optimize for higher operation efficiency and power output. The four diode structures are mνnp, Mup. MνnνM and MnνM, where M stands for metal and ν for low-doping n type semiconductor. for the pn junction-type BARITT diodes, the current transport mechanisms and the small-signal impedance of reach-through p+np+ and its related structures have also been studied.