Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor

Abstract

We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mu m asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mu m MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application. (C) 2010 The Japan Society of Applied Physics