| Title: | 具有奈米級微結構表面之高亮度垂直式氮化鎵發光二極體元件製作(II)-總計畫暨子計畫一：利用磊晶結構優化改善高功率發光二極體的效率下降(II) Improvement of Efficiency Droop in High Power Light-emitting Diodes by Optimization of Epitaxial Structure (II) |
| Authors: | 張俊彥 CHANG CHUN-YEN 國立交通大學電子工程學系及電子研究所 |
| Keywords: | 氮化鎵;發光二極體;效率驟降;化學性濕蝕刻剝離法;GaN;LED;Droop;Chemical Lift-off |
| Issue Date: | 2013 |
| Gov't Doc #: | NSC102-2623-E009-004-ET |
| URI: | http://hdl.handle.net/11536/89422 https://www.grb.gov.tw/search/planDetail?id=2858475&docId=405804 |
| Appears in Collections: | Research Plans |
