| 標題: | 系統面板非揮發性記憶體之製作(II) Fabrication of Nonvolatile Memory for System-on-Panel (II) |
| 作者: | 張俊彥 CHANG CHUN-YEN 交通大學電子工程系 |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2221-E009-270 |
| URI: | http://hdl.handle.net/11536/89737 https://www.grb.gov.tw/search/planDetail?id=1309488&docId=241984 |
| Appears in Collections: | Research Plans |
- 系統面板非揮發性記憶體之製作(II) / 張俊彥;CHANG CHUN-YEN
- Poly-Si Thin-Film Transistor Nonvolatile Memory Using Ge Nanocrystals as a Charge Trapping Layer Deposited by the Low-Pressure Chemical Vapor Deposition / Kuo, Po-Yi;Chao, Tien-Sheng;Huang, Jyun-Siang;Lei, Tan-Fu
- 非揮發記憶體用之高分子/核殼奈米顆粒奈米複合材料之合成與元件製備(II) / 韋光華;WEI KUNG-HWA
- Nonvolatile low-temperature polycrystalline silicon thin-film-transistor memory devices with oxide-nitride-oxide stacks / Liu, Po-Tsun;Huang, C. S.;Chen, C. W.
- A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory / Chen, Shih-Ching;Chang, Ting-Chang;Liu, Po-Tsun;Wu, Yung-Chun;Lin, Po-Shun
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