| 標題: | 氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(II) Processes and System Development of HF-Vapor for Nano Mosfets' Application(II) |
| 作者: | 趙天生 CHAO TIEN-SHENG 交通大學電子物理系 |
| 公開日期: | 2006 |
| 官方說明文件#: | NSC95-2221-E009-272 |
| URI: | http://hdl.handle.net/11536/89739 https://www.grb.gov.tw/search/planDetail?id=1309496&docId=241986 |
| 顯示於類別： | 研究計畫 |
- 氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(III) / 趙天生;CHAO TIEN-SHENG
- 氣化氫氟酸在奈米金氧半電晶體之應用及其設備之開發(I) / 趙天生;TIEN-SHENGCHAO
- Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-Vapor. pre-gate oxide cleaning / Chao, TS;Lin, YH;Yang, WL
- High work function IrxSi gates on HfAlON p-MOSFETs / Wu, CH;Yu, DS;Chin, A;Wang, SJ;Li, MF
- HfSiON n-MOSFETs using low-work function HfSi chi gate / Wu, C. H.;Hung, B. F.;Chin, Albert;Wang, S. J.;Yen, F. Y.
- 先進材料應用於低溫複晶矽薄膜電晶體和金氧半場效電晶體之研究 / 黃耀陞;Huang, Yao-Sheng;簡昭欣;Chien, Chao-Hsin
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