新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(II)

Full metadata record

DC Field	Value	Language
dc.contributor.author	雷添福	en_US
dc.contributor.author	LEI TAN-FU	en_US
dc.date.accessioned	2014-12-13T10:29:57Z	-
dc.date.available	2014-12-13T10:29:57Z	-
dc.date.issued	2006	en_US
dc.identifier.govdoc	NSC95-2221-E009-279	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/89827	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1309527&docId=241993	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	新式低溫複晶矽薄膜電晶體之結構與技術在電抹除可程式唯讀記憶體的應用(II)	zh_TW
dc.title	New Structure and Technology of Low-Temperature Poly-Si TFT for EEPROM Device Application(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans