| 標題: | 鍺鰭狀場效電晶體靜態隨機存取記憶體之讀取與寫入輔助電路分析 Analysis of Read/Write Assist Circuits for Germanium FinFET SRAM Cells |
| 作者: | 胡璧合 HU PI HO 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2013 |
| 官方說明文件#: | NSC102-2218-E009-018 |
| URI: | http://hdl.handle.net/11536/91276 https://www.grb.gov.tw/search/planDetail?id=3174232&docId=426785 |
| 顯示於類別： | 研究計畫 |
- Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist / Hu, Vita Pi-Ho;Fan, Ming-Long;Su, Pin;Chuang, Ching-Te
- Evaluation of Read-and Write-Assist Circuits for GeOI FinFET 6T SRAM Cells / Hu, Vita Pi-Ho;Fan, Ming-Long;Su, Pin;Chuang, Ching-Te
- 超薄層矽及鍺通道元件、邏輯電路及靜態隨機存取記憶體之研究與分析 / 胡璧合;Hu, Pi-Ho;蘇彬;Su, Pin
- Device Design and Analysis of Logic Circuits and SRAMs for Germanium FinFETs on SOI and Bulk Substrates / Hu, Vita Pi-Ho;Fan, Ming-Long;Su, Pin;Chuang, Ching-Te
- Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model / Fan, Ming-Long;Wu, Yu-Sheng;Hu, Vita Pi-Ho;Su, Pin;Chuang, Ching-Te
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