以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III)

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DC Field	Value	Language
dc.contributor.author	張國明	en_US
dc.contributor.author	CHANG KOW-MING	en_US
dc.date.accessioned	2014-12-13T10:34:25Z	-
dc.date.available	2014-12-13T10:34:25Z	-
dc.date.issued	2002	en_US
dc.identifier.govdoc	NSC91-2215-E009-014	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/92719	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=736708&docId=139404	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	以電子迴旋共振化學氣相沈積技術成長超薄閘極絕緣膜及可靠性之研究(III)	zh_TW
dc.title	Fabrication and Reliability of Ultra-Thin Gate Dielectrics by ECR-CVD Technique (III)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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