三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III)

Title:	三五族氮化合物半導體薄膜之物理特性研究---子計畫I：GaN類半導體材料及物理結構光性之研究(III) Optical Property Studies of GaN-based Semiconductor Materials and Structures (III)
Authors:	李明知 LEE MING-CHIH 交通大學電子物理系
Keywords:	氮化鎵;光學性質;雜質;時域解析冷激光;GaN;Optical property;Impurity;Time-resolved photoluminescence
Issue Date:	1999
Gov't Doc #:	NSC88-2112-M009-021
URI:	http://hdl.handle.net/11536/94391 https://www.grb.gov.tw/search/planDetail?id=426394&docId=76148
Appears in Collections:	Research Plans

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