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dc.contributor.author馮明憲en_US
dc.date.accessioned2014-12-13T10:37:32Z-
dc.date.available2014-12-13T10:37:32Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2218-E009-051zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94716-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=461765&docId=84664en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject光電材料zh_TW
dc.subject微觀結構zh_TW
dc.subjectGaNen_US
dc.subjectOptoelectronic materialen_US
dc.subjectMicrostructureen_US
dc.title氮化鎵族光電材料與元件之研發---子計畫III:鋁銦鎵氮化物微結構及光電特性分析(I)zh_TW
dc.titleThe Optoeclectronic and Microstructure Characterizations of AlxGa/sub 1-x/N/GaN and InxGa/sub 1-x/N/GaN (I)en_US
dc.typePlanen_US
dc.contributor.department交通大學材料科學與工程研究所zh_TW
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