奈米金屬閘MOS元件製程技術之研發

Full metadata record

DC Field	Value	Language
dc.contributor.author	葉清發	en_US
dc.date.accessioned	2014-12-13T10:37:53Z	-
dc.date.available	2014-12-13T10:37:53Z	-
dc.date.issued	2001	en_US
dc.identifier.govdoc	NSC90-2215-E009-097	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94920	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=665793&docId=126396	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	奈米結構	zh_TW
dc.subject	金氧半導體元件	zh_TW
dc.subject	金屬閘	zh_TW
dc.subject	積體電路技術	zh_TW
dc.subject	Nanostructure	en_US
dc.subject	MOS device	en_US
dc.subject	Metal gate	en_US
dc.subject	IC technique	en_US
dc.title	奈米金屬閘MOS元件製程技術之研發	zh_TW
dc.title	Study of Nano Metal Gate MOS Device Technology Fabrication	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
Appears in Collections:	Research Plans

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