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薄膜超導元件的研制與特性探討---子計畫四:鉈系1223相超導薄膜之製備與特性研究(II)
薄膜超導元件的研制與特性探討---子計畫四:鉈系1223相超導薄膜之製備與特性研究(II)
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Date
1996
Authors
莊振益
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Volume Title
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Abstract
Description
Keywords
覆蓋層
,
超導薄膜
,
腔內補償裝置
,
即時雙鎗交流濺鍍系統
,
維度各向異性
,
臨界電流密度
,
Capsulation layer
,
Superconducting thin film
,
In-chamber compensation setup
,
Dual-gun in-situ RF sputtering
,
Dimensionality anisotropy
,
Critical currentdensity
Citation
URI
https://www.grb.gov.tw/search/planDetail?id=239629&docId=44317
https://ir.lib.nycu.edu.tw/handle/11536/95658
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