金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測

Date

Authors

Keywords

界面缺陷, 汲極漏電流, 物理機制, 模擬, 金氧半場效電晶體, Interface trap, Drain leakage current, Physical mechanism, Simulation, MOSFET

URI

https://www.grb.gov.tw/search/planDetail?id=230199&docId=41827
https://ir.lib.nycu.edu.tw/handle/11536/95790

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研究計畫;;Research Plans