| 標題: | 深次微米MOS及Bipolar元件的模擬、分析及技術發展(II) Simulation, Cahracterization, and Technology for Deep Submicrometer MOS and Bipolar Devices(II) |
| 作者: | 吳慶源 國立交通大學電子工程學系 |
| 公開日期: | 1996 |
| 官方說明文件#: | NSC85-2215-E009-041 |
| URI: | http://hdl.handle.net/11536/96211 https://www.grb.gov.tw/search/planDetail?id=218541&docId=38694 |
| Appears in Collections: | Research Plans |
- 深次微米MOS及Bipolar元件的模擬、分析及技術發展 / 吳慶源
- Optimization on MOS-Triggered SCR Structures for On-Chip ESD Protection / Chen, Shih-Hung;Ker, Ming-Dou
- 產學合作計畫：深次微米元件技術開發(II) / 張俊彥;CHANG CHUN-YEN
- BASE CURRENT REVERSAL PHENOMENON IN A CMOS COMPATIBLE HIGH-GAIN N-P-N GATED LATERAL BIPOLAR-TRANSISTOR / HUANG, TH;CHEN, MJ
- SCR device with dynamic holding voltage for on-chip ESD protection in a 0.25-mu m fully salicided CMOS process / Ker, MD;Chen, ZP
- 鋁栓塞製程於深次微米元件之應用研究(II) / 吳文發
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