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共價鍵材料場效發射顯示技術之研究---子計畫I:三元Si-C-N材料場效發射顯示技術之研究(III)

dc.contributor.author郭正次en_US
dc.contributor.authorKUO CHENG-TZUen_US
dc.contributor.department國立交通大學材料科學與工程學系zh_TW
dc.date.accessioned2014-12-13T10:35:41Z
dc.date.available2014-12-13T10:35:41Z
dc.date.issued2001en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.identifier.govdocNSC90-2216-E009-034zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=673270&docId=128267en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/93550
dc.language.isozh_TWen_US
dc.subject共價鍵材料zh_TW
dc.subject場效發射顯示技術zh_TW
dc.subject矽碳氮材料zh_TW
dc.subjectCovalent bond materialen_US
dc.subjectField emission display technologyen_US
dc.subjectSi-C-N materialen_US
dc.title共價鍵材料場效發射顯示技術之研究---子計畫I:三元Si-C-N材料場效發射顯示技術之研究(III)zh_TW
dc.titleStudy on Field Emission Display Technology of Ternary Si-C-N Materials (III)en_US
dc.typePlanen_US

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