氮化鎵材料製程開發及元件製作(I)
| dc.contributor.author | 王興宗 | en_US |
| dc.contributor.author | WANG SHING CHUNG | en_US |
| dc.contributor.department | 國立交通大學光電工程研究所 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:37:34Z | |
| dc.date.available | 2014-12-13T10:37:34Z | |
| dc.date.issued | 2001 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC90-2215-E009-102 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=660682&docId=125042 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94732 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 製程開發 | zh_TW |
| dc.subject | GaN | en_US |
| dc.subject | Process development | en_US |
| dc.title | 氮化鎵材料製程開發及元件製作(I) | zh_TW |
| dc.title | GaN-Based Fabrication Process Development and Device Fabrication(I) | en_US |
| dc.type | Plan | en_US |
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