採用高層次操作模式及閘氧化層的高性能及可靠性SONOS快閃記憶體之研究(II)
| dc.contributor.author | 莊紹勳 | en_US |
| dc.contributor.author | Chung Steve S | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:31:11Z | |
| dc.date.available | 2014-12-13T10:31:11Z | |
| dc.date.issued | 2005 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC94-2215-E009-008 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=1143847&docId=219367 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/90760 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | 採用高層次操作模式及閘氧化層的高性能及可靠性SONOS快閃記憶體之研究(II) | zh_TW |
| dc.title | Operation Schemes and Advanced on Gate Stacks for High Performance and Reliable SONOS Flash Memory(II) | en_US |
| dc.type | Plan | en_US |
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