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Performance of Organic Thin-Film Transistors Controlled by Electrode and Device Structures

dc.citation.epage201en_US
dc.citation.issue4-6en_US
dc.citation.spage198en_US
dc.citation.volume5en_US
dc.contributor.authorYu, Chien-Hsienen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.contributor.authorLiao, Jin-Longen_US
dc.contributor.authorYan, Jing-Yien_US
dc.contributor.authorHo, Jia-Chongen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:09:40Z
dc.date.available2014-12-08T15:09:40Z
dc.date.issued2009-04-01en_US
dc.description.abstractWe have fabricated organic thin-film transistors (OTFTs) of top contact (TC) structures using silver electrode based on triethylsilylethynyl anthradithiophene (TES-ADT) with mobility above 0.41 cm(2) s(-1) V(-1), current modulation higher than 5 x 10(7) and sub-threshold swing below 0.65 V/dec.. The electrical characteristics of OTFTs are not only corresponding to the work function of source and drain electrodes materials but also to the surface tension and deposition energy of them. The effects of work function and surface tension dominate the electrical characteristics in bottom contact (BC) device. On the other hand, TC device is affected by deposition energy dominantly.en_US
dc.identifier.doi10.1109/JDT.2009.2016438en_US
dc.identifier.issn1551-319Xen_US
dc.identifier.journalJOURNAL OF DISPLAY TECHNOLOGYen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JDT.2009.2016438en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/7400
dc.identifier.wosnumberWOS:000266460500015
dc.language.isoen_USen_US
dc.subjectContact resistanceen_US
dc.subjectorganic compoundsen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titlePerformance of Organic Thin-Film Transistors Controlled by Electrode and Device Structuresen_US
dc.typeArticleen_US

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