Investigating the Gas Sensing Mechanism of the Vertical Polymer Space-Charge-Limited Transistor

dc.citation.epage	914	en_US
dc.citation.spage	912	en_US
dc.contributor.author	Li, Chang-Hung	en_US
dc.contributor.author	Zan, Hsiao-Wen	en_US
dc.contributor.author	Yu, Chih-Kuan	en_US
dc.contributor.author	Meng, Hsin-Fei	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2014-12-08T15:30:10Z
dc.date.available	2014-12-08T15:30:10Z
dc.date.issued	2012	en_US
dc.description.abstract	A high-sensitivity gas sensor based on SCLT is demonstrated in this paper. The oxidizing and reducing gases which act as electron dedoping (e-dedoping) and doping (e-doping) agents on the transistor active layer is investigated. Dedoping and doping the active layer varies the potential distribution in the vertical channel, and changes the output current density. The lowest detectable concentration of ammonia was 30 ppb at a base-to-emitter voltage as -0.2 V and collector-to-emitter voltage as -1.2 V.	en_US
dc.identifier.isbn	978-1-4577-1766-6	en_US
dc.identifier.issn	1930-0395	en_US
dc.identifier.journal	2012 IEEE SENSORS PROCEEDINGS	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/21612
dc.identifier.wosnumber	WOS:000315671100220
dc.language.iso	en_US	en_US
dc.title	Investigating the Gas Sensing Mechanism of the Vertical Polymer Space-Charge-Limited Transistor	en_US
dc.type	Proceedings Paper	en_US

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