INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20150035165 | zh_TW |
| dc.contributor.author | Chen Kuan-Neng | en_US |
| dc.contributor.author | Chang Yao-Jen | en_US |
| dc.date.accessioned | 2015-05-12T02:59:52Z | |
| dc.date.available | 2015-05-12T02:59:52Z | |
| dc.date.issued | 2015-02-05 | en_US |
| dc.description.abstract | An interconnection structure of a semiconductor device is provided, where the interconnection structure is constructed in a semiconductor substrate. The interconnection structure includes a first through silicon via and a second through silicon via both penetrating the semiconductor substrate, and the first through silicon via is spaced from the second through silicon via by a distance ranged from 2 μm to 40 μm. | zh_TW |
| dc.identifier.govdoc | H01L023/538 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/122870 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE | zh_TW |
| dc.type | Patents | en_US |