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Enhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfaces

dc.citation.epage3445en_US
dc.citation.issue4Ben_US
dc.citation.spage3442en_US
dc.citation.volume45en_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorChu, JTen_US
dc.contributor.authorKao, CCen_US
dc.contributor.authorHsueh, THen_US
dc.contributor.authorLu, TCen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.contributor.authorYu, CCen_US
dc.contributor.authorKuo, SYen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:16:57Z
dc.date.available2014-12-08T15:16:57Z
dc.date.issued2006-04-01en_US
dc.description.abstractThe InGaN/GaN light-emitting diode (LED) with a top p-GaN surface nanoroughened using Ni nanomasks and laser etching has been fabricated. The light output power of the InGaN/GaN LED with a nanoroughened top p-GaN surface is 1.55-fold that of a conventional LED. The series resistance of InGaN/GaN LED was reduced by 32% due to the increase in the contact area of the nanoroughened surface.en_US
dc.identifier.doi10.1143/JJAP.45.3442en_US
dc.identifier.issn0021-4922en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.3442en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12416
dc.identifier.wosnumberWOS:000237570600112
dc.language.isoen_USen_US
dc.subjectgallium nitride (GaN)en_US
dc.subjectlight-emitting diode (LED)en_US
dc.subjectexcimer laseren_US
dc.titleEnhanced light output in InGaN/GaN light emitting diodes with excimer laser etching surfacesen_US
dc.typeArticle; Proceedings Paperen_US

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