THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS
| dc.citation.epage | 760 | en_US |
| dc.citation.spage | 755 | en_US |
| dc.citation.volume | 337 | en_US |
| dc.contributor.author | WU, JW | en_US |
| dc.contributor.author | CHAN, SH | en_US |
| dc.contributor.author | LIN, KC | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.author | CHANG, EY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:27:49Z | |
| dc.date.available | 2014-12-08T15:27:49Z | |
| dc.date.issued | 1994 | en_US |
| dc.identifier.isbn | 1-55899-237-5 | en_US |
| dc.identifier.issn | 0272-9172 | en_US |
| dc.identifier.journal | ADVANCED METALLIZATION FOR DEVICES AND CIRCUITS - SCIENCE, TECHNOLOGY AND MANUFACTURABILITY | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20059 | |
| dc.identifier.wosnumber | WOS:A1994BB59J00099 | |
| dc.language.iso | en_US | en_US |
| dc.title | THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS | en_US |
| dc.type | Proceedings Paper | en_US |
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