ESD Self-Protection Design on 2.4-GHz T/R Switch for RF Application in CMOS Process

dc.citation.woscount	0	en_US
dc.contributor.author	Lin, Chun-Yu	en_US
dc.contributor.author	Liu, Rui-Hong	en_US
dc.contributor.author	Ker, Ming-Dou	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.date.accessioned	2017-04-21T06:48:20Z
dc.date.available	2017-04-21T06:48:20Z
dc.date.issued	2016	en_US
dc.description.abstract	An RF transceiver front-end for 2.4GHz applications realized by a fully integrated T/R switch with ESD self-protection capability is presented in this work. Experimental results show that the proposed design without using any additional ESD protection device can provide enough ESD self-protection capability with good RF performances.	en_US
dc.identifier.isbn	978-1-4673-9136-8	en_US
dc.identifier.issn	1541-7026	en_US
dc.identifier.journal	2016 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/136459
dc.identifier.wosnumber	WOS:000387121900099	en_US
dc.language.iso	en_US	en_US
dc.subject	Electrostatic discharges (ESD)	en_US
dc.subject	radio-frequency (RF)	en_US
dc.subject	transceiver	en_US
dc.subject	transmit/receive (T/R) switch	en_US
dc.title	ESD Self-Protection Design on 2.4-GHz T/R Switch for RF Application in CMOS Process	en_US
dc.type	Proceedings Paper	en_US

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