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Critical voltage reduction by alignment layer modification in Pi-cells

dc.citation.epage694en_US
dc.citation.spage692en_US
dc.contributor.authorWu, Wei-Chingen_US
dc.contributor.authorChen, Yi-Fanen_US
dc.contributor.authorChen, Szu-Fenen_US
dc.contributor.authorChen, Huang-Ming Philipen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:12:14Z
dc.date.available2014-12-08T15:12:14Z
dc.date.issued2007en_US
dc.description.abstractA new approach which can effectively lower the critical voltage (Vcr) of pi cell has been realized in this study. New structure of pi r cell can increase the control range of driving voltage, which makes the gray scale manipulation near Vcr more stable without loosing the fast response property.en_US
dc.identifier.isbn978-957-28522-4-8en_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9401
dc.identifier.wosnumberWOS:000258177700186
dc.language.isoen_USen_US
dc.titleCritical voltage reduction by alignment layer modification in Pi-cellsen_US
dc.typeProceedings Paperen_US

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