Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography
| dc.citation.epage | 2154 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 2152 | en_US |
| dc.citation.volume | 5 | en_US |
| dc.contributor.author | Yen, H. H. | en_US |
| dc.contributor.author | Kuo, H. C. | en_US |
| dc.contributor.author | Yeh, W. Y. | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:45:16Z | |
| dc.date.available | 2014-12-08T15:45:16Z | |
| dc.date.issued | 2008 | en_US |
| dc.description.abstract | GaN-based light-emitting diode (LED) with SiO2 photonie crystals (PCs) structure made by holographic lithography on an indium-tin-oxide (ITO) film was fabricated. The PCs made on SiO2 but an ITO film both improves the light extraction efficiency of the GaN-based LED and prevents the sheet resistance increasing of the ITO film from the dry etching damage. It was found that the forward voltage at 20 mA of the GaN-based LED with SiO2 PCs on an ITO film was 1.9% higher than the GaN-based LED with a planar ITO film only. The output power of GaN-based LED with SiO2 PCs on an ITO film at 20mA was 17.1%, 26.5% and 125.3% higher than that of the GaN-based LEDs with the planar SiO2/ITO, planar ITO or Ni/Au surface layers, respectively. | en_US |
| dc.identifier.doi | 10.1002/pssc.200778495 | en_US |
| dc.identifier.issn | 1610-1634 | en_US |
| dc.identifier.journal | PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/pssc.200778495 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/30520 | |
| dc.identifier.wosnumber | WOS:000256695700207 | |
| dc.language.iso | en_US | en_US |
| dc.title | Improvement of GaN-based LED with SiO2 photonic crystal on an ITO film by holographic lithography | en_US |
| dc.type | Article | en_US |