A unified behavior model of low noise amplifier for system-level simulation
| dc.citation.epage | 142 | en_US |
| dc.citation.spage | 139 | en_US |
| dc.contributor.author | Hung, Chih-De | en_US |
| dc.contributor.author | Wuen, Wen-Shen | en_US |
| dc.contributor.author | Chou, Mei-Fen | en_US |
| dc.contributor.author | Wen, Kuei-Ann | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:24:44Z | |
| dc.date.available | 2014-12-08T15:24:44Z | |
| dc.date.issued | 2006 | en_US |
| dc.description.abstract | This paper presents a unified RF behavior model that simultaneously predicts the effects of noise, nonlinearity, impedance matching and frequency response and that enables efficient and accurate system simulation. The proposed modeling approach allows characterizing the RF effects incrementally to reduce iteration. A Verilog-A behavior model for an ultra-wideband CMOS low noise amplifier is developed for fast and accurate system simulation. The system simulation results show that the behavior model agrees well with the transistor-level circuit with RMS error less than 0.79%. Ultimately, 87% reduction of simulation time is achieved. | en_US |
| dc.identifier.doi | 10.1109/ECWT.2006.280454 | en_US |
| dc.identifier.isbn | 978-2-9600551-5-3 | en_US |
| dc.identifier.journal | 2006 EUROPEAN CONFERENCE ON WIRELESS TECHNOLOGIES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/ECWT.2006.280454 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/17188 | |
| dc.identifier.wosnumber | WOS:000245511600036 | |
| dc.language.iso | en_US | en_US |
| dc.subject | RF behavior model | en_US |
| dc.subject | low noise amplifier | en_US |
| dc.title | A unified behavior model of low noise amplifier for system-level simulation | en_US |
| dc.type | Proceedings Paper | en_US |