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RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

dc.citation.epage140en_US
dc.citation.spage139en_US
dc.contributor.authorWang, Sheng-Chunen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorLin, Chien-Tingen_US
dc.contributor.authorLiang, Victoren_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:25:08Z
dc.date.available2014-12-08T15:25:08Z
dc.date.issued2006en_US
dc.identifier.isbn1-4244-0181-Xen_US
dc.identifier.journal2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papersen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/17510
dc.identifier.wosnumberWOS:000239791300055
dc.language.isoen_USen_US
dc.titleRF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETsen_US
dc.typeProceedings Paperen_US

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