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Investigation and Comparison of Design Space for Ultra-Thin-Body GeOI/SOI Negative Capacitance FETs

dc.contributor.authorLee, Ho-Peien_US
dc.contributor.authorYu, Chien-Linen_US
dc.contributor.authorYou, Wei-Xiangen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2018-08-21T05:56:52Z
dc.date.available2018-08-21T05:56:52Z
dc.date.issued2017-01-01en_US
dc.identifier.issn1930-8868en_US
dc.identifier.journal2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/146759
dc.identifier.wosnumberWOS:000408991800027en_US
dc.language.isoen_USen_US
dc.titleInvestigation and Comparison of Design Space for Ultra-Thin-Body GeOI/SOI Negative Capacitance FETsen_US
dc.typeProceedings Paperen_US

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