Simulation of Grain-Boundary Induced V-th Variability in Stackable NAND Flash Using a Voronoi Approach

Abstract

In this work, we employ a novel Voronoi approach to simulate the impact of trap states in the poly-Si channel. Using this method, we investigate the grain boundary induced threshold voltage variability in stackable NAND flash memories. Our study indicates that considering the randomized shape and location of grain boundaries is crucial to the modeling and simulation of these devices.