Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface
| dc.citation.epage | 69 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.spage | 67 | en_US |
| dc.citation.volume | 33 | en_US |
| dc.contributor.author | Lin, B-W. | en_US |
| dc.contributor.author | Hsu, W-C. | en_US |
| dc.contributor.author | Wu, Y. S. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:06Z | |
| dc.date.available | 2014-12-08T15:29:06Z | |
| dc.date.issued | 2010 | en_US |
| dc.description.abstract | The PSSs were fabricated by wet etching. Compared with the platform-PSS, the modified-PSS was still capped with a layer on the top platform after wet etching. The output power of the platform-PSS LED and modified-PSS are 27.3 mW and 29 mW, respectively, at an injection current of 20 mA. The output power of the modified-PSS LED is enhanced 6% compared with the platform-PSS. The results reveal that both electrical properties and optical properties of modified-PSS LED were improved. | en_US |
| dc.identifier.doi | 10.1149/1.3485608 | en_US |
| dc.identifier.isbn | 978-1-56677-832-9 | en_US |
| dc.identifier.issn | 1938-5862 | en_US |
| dc.identifier.journal | STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS 52 (SOTAPOCS 52) | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1149/1.3485608 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/20996 | |
| dc.identifier.wosnumber | WOS:000313569400006 | |
| dc.language.iso | en_US | en_US |
| dc.title | Enhancement Performance of GaN-based Light-emitting Diodes by Modified Patterned Sapphire Surface | en_US |
| dc.type | Proceedings Paper | en_US |