深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究
| dc.contributor.author | 汪大暉 | en_US |
| dc.contributor.author | WANG TAHUI | en_US |
| dc.contributor.department | 交通大學電子工程系 | zh_TW |
| dc.date.accessioned | 2014-12-13T10:36:59Z | |
| dc.date.available | 2014-12-13T10:36:59Z | |
| dc.date.issued | 1999 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.identifier.govdoc | NSC88-2215-E009-042 | zh_TW |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=418062&docId=74158 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/94320 | |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 深次微米 | zh_TW |
| dc.subject | 熱載子 | zh_TW |
| dc.subject | 洩漏電流 | zh_TW |
| dc.subject | 退化 | zh_TW |
| dc.subject | 汲極 | zh_TW |
| dc.subject | 氧化層 | zh_TW |
| dc.subject | 金氧半場效電晶體 | zh_TW |
| dc.subject | Deep submicrometer | en_US |
| dc.subject | Hot carrier | en_US |
| dc.subject | Leakage current | en_US |
| dc.subject | Degradation | en_US |
| dc.subject | Drain | en_US |
| dc.subject | Oxided layer | en_US |
| dc.subject | MOSFET | en_US |
| dc.title | 深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究 | zh_TW |
| dc.title | Hot Carrier Stress Induced Drain Leakage Current Degradation in Deep Submicron MOSFET's | en_US |
| dc.type | Plan | en_US |