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高外部量子效率(EQE大於12%)深紫外光發光二極體之開發( I )

dc.contributor.author郭浩中zh_TW
dc.contributor.author盧廷昌zh_TW
dc.contributor.department國立交通大學光電工程學系(所) zh_TW
dc.date.accessioned2016-12-20T03:56:52Z
dc.date.available2016-12-20T03:56:52Z
dc.date.issued2016en_US
dc.description.abstract zh_TW
dc.description.abstract en_US
dc.description.sponsorship科技部 zh_TW
dc.identifier.govdocMOST105-2622-E009-023-CC2 zh_TW
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=11898543&docId=490808en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/131941
dc.language.isozh_TWen_US
dc.subject zh_TW
dc.subject en_US
dc.title高外部量子效率(EQE大於12%)深紫外光發光二極體之開發( I )zh_TW
dc.titleDevelopment of High External Quantum Efficiency (&Gt;;12%) Light-Emitting Diode in Deep Ultra Violet Spectral Region( I )en_US
dc.typePlanen_US

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