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臨界電壓量測裝置

dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber201346300zh_TW
dc.contributor.author莊景德en_US
dc.contributor.author周世傑en_US
dc.contributor.author林耕慶en_US
dc.contributor.author王紹丞en_US
dc.contributor.author林宜緯en_US
dc.contributor.author蔡銘謙en_US
dc.contributor.author石維強en_US
dc.contributor.author連南鈞en_US
dc.contributor.author李坤地en_US
dc.contributor.author朱俊愷en_US
dc.date.accessioned2014-12-16T06:11:47Z
dc.date.available2014-12-16T06:11:47Z
dc.date.issued2013-11-16en_US
dc.description.abstract本發明係揭露一種臨界電壓量測裝置,其係連接一六電晶體靜態隨機存取記憶體,此記憶體包含二反向器,其係分別連接一場效電晶體,其中一反向器之電源端為浮接,且與此反向器連接之場效電晶體之源極與汲極相互短路,並利用此架構施加不同偏壓,再配合二電壓選擇器、一電阻、一放大器與上述記憶體構成負回授連接方式,以量測出另一反向器之二場效電晶體,及與其連接之場效電晶體之臨界電壓。本發明不用改變六電晶體靜態隨機存取記憶體之物理結構,就可以用單一電路架構量測三顆場效電晶體之臨界電壓,大幅降低製程、量測與時間成本。zh_TW
dc.identifier.govdocG01R031/3173zh_TW
dc.identifier.govdocG11C016/02zh_TW
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/103189
dc.language.isozh_TWen_US
dc.title臨界電壓量測裝置zh_TW
dc.typePatentsen_US

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