SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 20130153886 | zh_TW |
| dc.contributor.author | Chang Edward Yi. | en_US |
| dc.contributor.author | Lin Yueh-Chin | en_US |
| dc.contributor.author | Chang Chia-Hua | en_US |
| dc.contributor.author | Trinh Hai-Dang | en_US |
| dc.date.accessioned | 2014-12-16T06:14:58Z | |
| dc.date.available | 2014-12-16T06:14:58Z | |
| dc.date.issued | 2013-06-20 | en_US |
| dc.description.abstract | The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer. | zh_TW |
| dc.identifier.govdoc | H01L029/12 | zh_TW |
| dc.identifier.govdoc | H01L021/02 | zh_TW |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/105036 | |
| dc.language.iso | zh_TW | en_US |
| dc.title | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | zh_TW |
| dc.type | Patents | en_US |