Characteristics of hafnium oxide resistance random access memory with different setting compliance current
| dc.citation.epage | en_US | |
| dc.citation.issue | 16 | en_US |
| dc.citation.volume | 103 | en_US |
| dc.citation.woscount | 11 | |
| dc.contributor.author | Su, Yu-Ting | en_US |
| dc.contributor.author | Chang, Kuan-Chang | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Tsai, Tsung-Ming | en_US |
| dc.contributor.author | Zhang, Rui | en_US |
| dc.contributor.author | Lou, J. C. | en_US |
| dc.contributor.author | Chen, Jung-Hui | en_US |
| dc.contributor.author | Young, Tai-Fa | en_US |
| dc.contributor.author | Chen, Kai-Huang | en_US |
| dc.contributor.author | Tseng, Bae-Heng | en_US |
| dc.contributor.author | Shih, Chih-Cheng | en_US |
| dc.contributor.author | Yang, Ya-Liang | en_US |
| dc.contributor.author | Chen, Min-Chen | en_US |
| dc.contributor.author | Chu, Tian-Jian | en_US |
| dc.contributor.author | Pan, Chih-Hung | en_US |
| dc.contributor.author | Syu, Yong-En | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:32:57Z | |
| dc.date.available | 2014-12-08T15:32:57Z | |
| dc.date.issued | 2013-10-14 | en_US |
| dc.description.abstract | In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC. | en_US |
| dc.identifier.doi | 10.1063/1.4825104 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.4825104 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/22978 | |
| dc.identifier.wosnumber | WOS:000326148700085 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of hafnium oxide resistance random access memory with different setting compliance current | en_US |
| dc.type | Article | en_US |