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Fabrication and characterization of spherical polycrystalline diamond emitter arrays

dc.citation.epage89en_US
dc.citation.issueen_US
dc.citation.spage85en_US
dc.citation.volume308en_US
dc.contributor.authorChen, CFen_US
dc.contributor.authorHuang, WHen_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.date.accessioned2014-12-08T15:01:23Z
dc.date.available2014-12-08T15:01:23Z
dc.date.issued1997-10-31en_US
dc.description.abstractIn this work, a high density of spherical polycrystalline diamond field emitter arrays (SPD-FEAs) were fabricated, using microwave plasma chemical vapor deposition (MPCVD) method. Results obtained from the current-voltage (I-e-V-a) characteristics indicate that the impurities heavily influence electron emission. In addition, the emissions current of the phosphorus-doped SDP-FEAs appears to be 25 times lar er than the boron-doped and 120 times larger than the undoped SPD-FEAs. (C) 1997 Elsevier Science S.A.en_US
dc.identifier.doi10.1016/S0040-6090(97)00671-8en_US
dc.identifier.issn0040-6090en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.identifier.urihttp://dx.doi.org/10.1016/S0040-6090(97)00671-8en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/244
dc.identifier.wosnumberWOS:000071553400016
dc.language.isoen_USen_US
dc.subjectdiamonden_US
dc.subjectfield emitter arrayen_US
dc.subjectemission currenten_US
dc.subjectmicrowave plasma chemical vapor depositionen_US
dc.titleFabrication and characterization of spherical polycrystalline diamond emitter arraysen_US
dc.typeArticle; Proceedings Paperen_US

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