InAs/GaAs quantum dot infrared photodetectors with different growth temperatures

Abstract

InAs/GaAs quantum dot infrared photodetectors were fabricated with quantum dots grown at three different temperatures. Large detection wavelength shift (5-14.5 mum) was demonstrated by changing 40 degrees of the epitaxy temperature. The smaller quantum dots grown at lower temperature generate 14.5 mum responses. The detectivity of the normal incident 15 mum QDIP at 77 K is 3 x 10(8) cm Hz(1/2)/W. A three-color detector was also demonstrated with quantum dots grown at medium temperature. The three-color detection comes from two groups of different sizes of dots within one QD layer. This new type of multicolor detector shows unique temperature tuning behavior that was never reported before. (C) 2003 Elsevier B.V. All rights reserved.