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Retarded Photoreaction Reversibility of a-IZO TFT for Light Sensor Applications

dc.citation.epage1135en_US
dc.citation.spage1132en_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChou, Yi-Tehen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorChu, Chun Hungen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:41:27Z
dc.date.available2014-12-08T15:41:27Z
dc.date.issued2009en_US
dc.description.abstractThe retarded photoreaction reversibility of a-IZO TFT has been discussed in this work. With a small DC voltage bias, the reaction was speeded up and the electrical characteristics were recovered back to the fresh state. The V(th) shifting behavior possesses the potential for the light sensor applications in display technologies.en_US
dc.identifier.journal2009 SID INTERNATIONAL SYMPOSIUM DIGEST OF TECHNICAL PAPERS, VOL XL, BOOKS I - IIIen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/28198
dc.identifier.wosnumberWOS:000272997600286
dc.language.isoen_USen_US
dc.titleRetarded Photoreaction Reversibility of a-IZO TFT for Light Sensor Applicationsen_US
dc.typeProceedings Paperen_US

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