GaN-based vertical-cavity surface-emitting lasers operating at high temperature
| dc.citation.epage | 111 | en_US |
| dc.citation.spage | 110 | en_US |
| dc.contributor.author | Chang, Tsu-Chi | en_US |
| dc.contributor.author | Kuo, Shiou-Yi | en_US |
| dc.contributor.author | Lian, Jhen-Ting | en_US |
| dc.contributor.author | Hong, Kuo-Bin | en_US |
| dc.contributor.author | Lu, Tien-Chang | en_US |
| dc.contributor.author | Wang, Shing-Chung | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2018-08-21T05:57:11Z | |
| dc.date.available | 2018-08-21T05:57:11Z | |
| dc.date.issued | 2017-01-01 | en_US |
| dc.description.abstract | We report on GaN-based vertical-cavity surface emitting lasers (VCSELs) capable of high temperature operation. The structures of VCSELs include double dielectric distributed Bragg reflectors and bonded to a silicon substrate with a p-side-down configuration, allowing a better heat dissipation. The temperature dependent lasing characteristics of VCSELs can sustain to 350K. | en_US |
| dc.identifier.journal | 2017 22ND MICROOPTICS CONFERENCE (MOC) | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/147163 | |
| dc.identifier.wosnumber | WOS:000427705300046 | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | GaN-based vertical-cavity surface-emitting lasers operating at high temperature | en_US |
| dc.type | Proceedings Paper | en_US |
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